Optical properties and chemical bonding characteristics of amorphous SiNx:H thin films grown by the plasma enhanced chemical vapor deposition method

被引：11

作者：

He, Yin ^{[1
]}

Wang, Yuanzhe ^{[1
]}

Li, Wang ^{[2
,3
]}

Han, Weizhi ^{[2
]}

Hu, Zhijuan ^{[1
]}

Qin, Xiaomei ^{[1
]}

Du, Guoping ^{[1
,3
]}

Shi, Wangzhou ^{[1
]}

机构：

[1] Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China

[2] Chint Solar Zhejiang Co, R&D Crystalline Silicon Cells, Hangzhou 310053, Peoples R China

[3] Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 03期

关键词：

SiNx:H thin films; PECVD; Rapid thermal processing; Optical properties; Chemical bonding; TEMPERATURE SURFACE PASSIVATION; SILICON-NITRIDE;

D O I：

10.1016/j.jnoncrysol.2011.10.016

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous silicon nitride (SiNx:H) thin films grown by the plasma enhanced chemical vapor deposition (PECVD) method are presently the most important antireflection coatings for crystalline silicon solar cells. In this work, we investigated the optical properties and chemical bonding characteristics of the amorphous SiNx:H thin films deposited by PECVD. Silane (SiH4) and ammonia (NH3) were used as the reactive precursors. The dependence of the growth rate and refractive index of the SiNx:H thin films on the SiH4/NH3 gas flow ratio was studied. The chemical bonding characteristics and the surface morphologies of the SiNx:H thin films were studied using the Fourier transform infrared spectroscopy and atomic force microscopy, respectively. We also investigated the effect of rapid thermal processing on the optical properties and surface morphologies of the SiNx:H thin films. It was found that the rapid thermal processing resulted in a decrease in the thickness, increase in the refractive index, and coarser surfaces for the SiNx:H thin films. (C) 2011 Elsevier B.V. All rights

引用

页码：577 / 582

页数：6

共 24 条

[1]

Aberle AG, 1997, PROG PHOTOVOLTAICS, V5, P29, DOI 10.1002/(SICI)1099-159X(199701/02)5:1<29::AID-PIP149>3.0.CO

[2]

2-M

[3] MIMC reliability and electrical behavior defined by a physical layer property of the dielectric [J].

Ackaert, J. ;

Charavel, R. ;

Dhondt, K. ;

Vlachakis, B. ;

De Schepper, L. ;

Millecam, M. ;

Vandevelde, E. ;

Bogaert, P. ;

Iline, A. ;

De Backer, E. ;

Vlad, A. ;

Raskin, J. -P. .

MICROELECTRONICS RELIABILITY, 2008, 48 (8-9) :1553-1556

[4] Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides [J].

Ay, F ;

Aydinli, A .

OPTICAL MATERIALS, 2004, 26 (01) :33-46

[5] Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors [J].

Benoit, D. ;

Regolini, J. ;

Morin, P. .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2169-2172

[6] Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs [J].

Bernát, J ;

Javorka, P ;

Fox, A ;

Marso, M ;

Lüth, H ;

Kordos, P .

SOLID-STATE ELECTRONICS, 2003, 47 (11) :2097-2103

[7]

Brody A.L., 1994, PACKAG TECHNOL ENG, V3, P44

[8] THE EFFECTS OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF PLASMA-ENHANCED CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE [J].

BROWN, WD ;

KHALIQ, MA .

THIN SOLID FILMS, 1990, 186 (01) :73-85

[9] Effect of deposition conditions on charging processes in SiNx: Application to RF-MEMS capacitive switches [J].

Daigler, Richard ;

Papandreou, Eleni ;

Koutsoureli, Matroni ;

Papaioannou, George ;

Papapolymerou, John .

MICROELECTRONIC ENGINEERING, 2009, 86 (03) :404-407

[10] Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride [J].

Duerinckx, F ;

Szlufcik, J .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) :231-246

← 1 2 3 →