Memristive operations demonstrated by gap-type atomic switches

被引：34

作者：

Hasegawa, Tsuyoshi ^{[1
,2
]}

Nayak, Alpana ^{[1
]}

Ohno, Takeo ^{[1
,2
]}

Terabe, Kazuya ^{[1
]}

Tsuruoka, Tohru ^{[1
,2
]}

Gimzewski, James K. ^{[1
,3
]}

Aono, Masakazu ^{[1
]}

机构：

[1] Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

[3] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 102卷 / 04期

关键词：

SOLID ELECTROCHEMICAL REACTION; SPIN ELECTRONICS;

D O I：

10.1007/s00339-011-6317-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

引用

页码：811 / 815

页数：5

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