A-20-dBm Sensitivity RF Energy-Harvesting Rectifier Front End Using a Transformer IMN

被引：15

作者：

Lian, Wen Xun ^{[1
]}

Ramiah, Harikrishnan ^{[1
]}

Chong, Gabriel ^{[1
,2
]}

Churchill, Kishore Kumar Pakkirisami ^{[1
]}

Lai, Nai Shyan ^{[3
]}

Chen, Yong ^{[4
]}

Mak, Pui-In ^{[4
]}

Martins, Rui P. ^{[5
]}

机构：

[1] Univ Malaya, Dept Elect Engn, Fac Engn, Kuala Lumpur 50603, Malaysia

[2] Nexperia R&D Penang, Bayan Lepas 11900, Malaysia

[3] Asia Pacific Univ Technol & Innovat, Sch Engn, Taman Teknol Malaysia, Kuala Lumpur 57000, Malaysia

[4] Univ Macau, State Key Lab Analog & Mixed Signal VLSI & IME EC, Taipa, Macao, Peoples R China

[5] Univ Macau, State Key Lab Analog & Mixed Signal VLSI & IME EC, Macau, Peoples R China

来源：

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2022年 / 30卷 / 11期

关键词：

Cross-coupled differential drive (CCDD); impedance matching network (IMN); radio frequency energy harvesting (RFEH); POWER; DESIGN;

D O I：

10.1109/TVLSI.2022.3207158

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This article describes a fully integrated CMOS radio frequency energy-harvesting (RFEH) front end. It features an on-chip stacked step-up transformer integrated with a cross-coupled differential drive (CCDD) rectifier to enhance the input sensitivity. The transformer also serves as an on-chip balun for the CCDD rectifier. The CCDD rectifier innovates a gate-biasing technique and realizes coupling capacitors at the end of each stage to increase the subsequent stage biasing. Here, our RFEH front end operating at 900 MHz achieves an improved sensitivity of -20 and -19.2 dBm at the 1-V output for no-load and a 1-M Omega load, respectively.

引用

页码：1808 / 1812

页数：5

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