Influence of water vapor adsorption on the C-V characteristics of heterostructures containing porous silicon

被引：9

作者：

Tutov, EA ^{[1
]}

Bormontov, EN ^{[1
]}

Kashkarov, VM ^{[1
]}

Pavlenko, MN ^{[1
]}

Domashevskaya, ÉP ^{[1
]}

机构：

[1] Voronezh State Univ, Voronezh 394693, Russia

来源：

TECHNICAL PHYSICS | 2003年 / 48卷 / 11期

关键词：

Porosity; Hydrogen Peroxide; Water Vapor; Adsorption Isotherm; Porous Silicon;

D O I：

10.1134/1.1626777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous silicon (por-Si) is prepared by the electrochemical etching of single-crystal n-silicon in an aqueous-alcoholic solution of hydrofluoric acid in the presence of hydrogen peroxide oxidizer. The dependence of the high-frequency C-V characteristics of Al/por-Si/Si heterostructures on the relative humidity is studied. A model of capacitor structure is proposed, and a method of analyzing its capacitance as a function of the water vapor partial pressure in terms of the adsorption isotherm is elaborated. Within the framework of this model, the porosity of the material, the effective fraction of silicon dioxide in the por-Si, the fraction of intercommunicating porosity, the micropore-to-mesopore volume ratio, and the mesopore size distribution are determined. The porous silicon prepared in this work seems promising as a sensitive layer in capacitance-type humidity sensors. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：1442 / 1448

页数：7

共 22 条

[1] Simulation of the formation of porous-silicon structures [J].

Aleksandrov, LN ;

Novikov, PL .

JETP LETTERS, 1997, 65 (09) :714-719

[2]

ANDERSON RC, 1990, SENSOR ACTUAT A-PHYS, V23, P835

[3] Composition and porosity of multicomponent structures: porous silicon as a three-component system [J].

Belyakov, LV ;

Makarova, TL ;

Sakharov, VI ;

Serenkov, IT ;

Sreseli, OM .

SEMICONDUCTORS, 1998, 32 (09) :1003-1005

[4]

BORMONTOV EN, 1998, IZV VYSSH UCHEBN ZAV, P95

[5]

Buchin E. Yu., 1995, Technical Physics Letters, V21, P27

[6]

CANHAM LT, 1997, EMIS DATA REV SER, V18

[7]

Cheremskoi P.G., 1985, METHODS STUDYING POR

[8]

Demidovich V. M., 1992, Soviet Technical Physics Letters, V18, P459

[9]

DEMIDOVICH VM, 1996, VESTN MOSK GOS U 3, P99

[10]

DOMASHEVSKAYA EP, 1998, J ELECT SPECTROSC RE, V88, P958

← 1 2 3 →