New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs

被引：100

作者：

Cho, Ho Jin ^{[1
]}

Kim, Young Dae ^{[1
]}

Park, Dong Su ^{[1
]}

Lee, Euna ^{[1
]}

Park, Cheol Hwan ^{[1
]}

Jang, Jun Soo ^{[1
]}

Lee, Keum Bum ^{[1
]}

Kim, Hai Won ^{[1
]}

Ki, Young Jong ^{[1
]}

Han, Keun ^{[1
]}

Song, Yong Wook ^{[1
]}

机构：

[1] Hynix Semicond Inc, R&D Div, Kyoungi 467701, South Korea

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 11-12期

关键词：

DRAM capacitor; TIT capacitor; ZrO2/Al2O3/ZrO2 (ZAZ);

D O I：

10.1016/j.sse.2007.09.030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was successfully developed for DRAM capacitor dielectrics of 60 nm and below technologies. ZAZ dielectric film grown by ALD has a mixture structure of crystalline phase ZrO2 and amorphous phase Al2O3 in order to optimize dielectric properties. ZAZ TIT capacitor showed small Tox.eq of 8.5 angstrom and a low leakage current density of 0.35 fA/cell, which meet leakage current criteria of 0.5 fA/cell for mass production. ZAZ TIT capacitor showed a smaller cap leak fail bit than HAH capacitor and stable leakage current up to 550 degrees C anneal. TDDB (time dependent dielectric breakdown) behavior reliably satisfied the 10-year lifetime criteria within operation voltage range. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1529 / 1533

页数：5