Atomically flat diamond (100) surface formation by anisotropic etching of solid-solution reaction of carbon into nickel

被引：23

作者：

Nakanishi, Kazuhiro ^{[1
]}

Kuroshima, Hiroki ^{[1
]}

Matsumoto, Tsubasa ^{[1
]}

Inokuma, Takao ^{[1
]}

Tokuda, Norio ^{[1
]}

机构：

[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9201192, Japan

来源：

关键词：

Diamond; Anisotropic etching; Atomically flat surface; Solid-solution reaction; SINGLE-CRYSTAL DIAMOND; PLASMA; HPHT; DISLOCATION; EMISSION; DEFECT; FILMS; CF4; O-2; FE;

D O I：

10.1016/j.diamond.2016.06.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The morphology of diamond (100) surfaces etched by a solid-solution reaction of C into Ni was investigated. The etching was conducted at 900 degrees C under an Ar atmosphere. Diamond was selectively etched only under the Ni films. Atomically flat diamond (100) surfaces with step-terrace structures were formed on the etched regions. The step height was approximately 0.18 nm, which is equivalent to that of a double monatomic layer of (100) diamond. The step-edge lines were along the < 110 > directions. These results indicate that the diamond etching by the solid-solution reaction of C into Ni was anisotropic. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：127 / 130

页数：4

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