Size-driven phase transition in stress-induced ferroelectric thin films

被引：63
|
作者：
Zhang, J
Yin, Z [1 ]
Zhang, MS
Scott, JF
机构：
[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England
来源：
SOLID STATE COMMUNICATIONS | 2001年 / 118卷 / 05期
关键词：
ferroelectrics; thin films; epitaxy; laser processing; phase transitions; dielectric response;
D O I：
10.1016/S0038-1098(01)00085-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have developed a concise phenomenological theory to investigate phase transitions and dielectric properties of ferroelectric thin films under stress. When the polarization at the surface is greater than that in the interior of the film, competition between the 'superpolarized' surface and tensile stress leads to a ferroelectric-paraelectric transition above a critical stress. This model is appropriate for the data on stress-induced barium-strontium titanate (BST) thin-film ferroelectric memory devices [Jpn. J. Appl. Phys. 36 (1997) 5846]. Stress-thickness phase diagrams are presented for PbTiO3 and BaTiO3 ferroelectric thin films. (C) 2001 Published by Elsevier Science Ltd.
引用
收藏
页码：241 / 246
页数：6
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