Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide

被引：364

作者：

Li, Hua-Min ^{[1
,2
]}

Lee, Daeyeong ^{[1
]}

Qu, Deshun ^{[1
]}

Liu, Xiaochi ^{[1
]}

Ryu, Jungjin ^{[1
]}

Seabaugh, Alan ^{[2
]}

Yoo, Won Jong ^{[1
]}

机构：

[1] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nano Technol, Samsung SKKU Graphene Ctr, Dept Nano Sci & Technol, Suwon 440746, South Korea

[2] Univ Notre Dame, Dept Elect Engn, Ctr Low Energy Syst Technol LEAST, Notre Dame, IN 46556 USA

来源：

NATURE COMMUNICATIONS | 2015年 / 6卷

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; INTEGRATED-CIRCUITS; GRAPHENE; TRANSITION; SEMICONDUCTOR; ELECTRONICS; GENERATION;

D O I：

10.1038/ncomms7564

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p-n junctions are fabricated in ultrathin MoS2 by introducing AuCl3 and benzyl viologen dopants. Unlike usual unipolar MoS2, the MoS2 p-n junctions show ambipolar carrier transport, current rectification via modulation of potential barrier in films thicker than 8 nm and reversed current rectification via tunnelling in films thinner than 8 nm. The ultimate thinness of the vertical p-n homogeneous junctions in MoS2 is experimentally found to be 3 nm, and the chemical doping depth is found to be 1.5 nm. The ultrathin MoS2 p-n junctions present a significant potential of the two-dimensional crystals for flexible, transparent, high-efficiency electronic and optoelectronic applications.

引用

页数：9

共 45 条

[1] High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects [J].

Bao, Wenzhong ;

Cai, Xinghan ;

Kim, Dohun ;

Sridhara, Karthik ;

Fuhrer, Michael S. .

APPLIED PHYSICS LETTERS, 2013, 102 (04)

[2] Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials [J].

Bernardi, Marco ;

Palummo, Maurizia ;

Grossman, Jeffrey C. .

NANO LETTERS, 2013, 13 (08) :3664-3670

[3] Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures [J].

Bertolazzi, Simone ;

Krasnozhon, Daria ;

Kis, Andras .

ACS NANO, 2013, 7 (04) :3246-3252

[4]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]

[5] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

[6] Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene [J].

Butler, Sheneve Z. ;

Hollen, Shawna M. ;

Cao, Linyou ;

Cui, Yi ;

Gupta, Jay A. ;

Gutierrez, Humberto R. ;

Heinz, Tony F. ;

Hong, Seung Sae ;

Huang, Jiaxing ;

Ismach, Ariel F. ;

Johnston-Halperin, Ezekiel ;

Kuno, Masaru ;

Plashnitsa, Vladimir V. ;

Robinson, Richard D. ;

Ruoff, Rodney S. ;

Salahuddin, Sayeef ;

Shan, Jie ;

Shi, Li ;

Spencer, Michael G. ;

Terrones, Mauricio ;

Windl, Wolfgang ;

Goldberger, Joshua E. .

ACS NANO, 2013, 7 (04) :2898-2926

[7]

Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/nchem.1589, 10.1038/NCHEM.1589]

[8] Lateral MoS2 p-n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics [J].

Choi, Min Sup ;

Qu, Deshun ;

Lee, Daeyeong ;

Liu, Xiaochi ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Yoo, Won Jong .

ACS NANO, 2014, 8 (09) :9332-9340

[9] Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices [J].

Choi, Min Sup ;

Lee, Gwan-Hyoung ;

Yu, Young-Jun ;

Lee, Dae-Yeong ;

Lee, Seung Hwan ;

Kim, Philip ;

Hone, James ;

Yoo, Won Jong .

NATURE COMMUNICATIONS, 2013, 4

[10] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

← 1 2 3 4 5 →