Giant room temperature electric-field-assisted magnetoresistance in La0.7Sr0.3MnO3/n-Si nanotip heterojunctions

被引：3

作者：

Chong, Cheong-Wei ^{[1
,2
]}

Hsu, Daniel ^{[3
]}

Chen, Wei-Chao ^{[4
]}

Li, Chien-Cheng ^{[3
]}

Huang, Yi-Fan ^{[3
]}

Han, Hsieh-Cheng ^{[3
]}

Lin, Jauyn Grace ^{[3
]}

Chen, Li-Chyong ^{[3
]}

Chen, Kuei-Hsien ^{[4
]}

Chen, Yang-Fang ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Acad Sinica, Taiwan Int Grad Program, Nano Sci & Technol Program, Taipei 115, Taiwan

[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[4] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 12期

关键词：

HETEROSTRUCTURES;

D O I：

10.1088/0957-4484/22/12/125701

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La0.7Sr0.3MnO3 (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 mu A. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.

引用

页数：5

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