Field Electron Emission Characteristics and Physical Mechanism of Individual Single-Layer Graphene

被引:143
作者
Xiao, Zhiming [1 ,2 ]
She, Juncong [1 ,2 ]
Deng, Shaozhi [1 ,2 ]
Tang, Zikang [1 ,2 ,3 ]
Li, Zhibing [1 ,2 ]
Lu, Jianming [3 ]
Xu, Ningsheng [1 ,2 ]
机构
[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys & Engn, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
field emission; single layer graphene; microanode probe; upward bending FN plot; 2D regime; line current density; FILMS;
D O I
10.1021/nn101719r
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Due to its difficulty, experimental measurement of field emission from a single layer graphene has not been,reported;although field emission from a two dimensional (2D) regime has been an attractive topic. The open surface and sharp edge of graphene are beneficial for electron emission A 2D, geometrical effect, such as massless Dirac fermion, can lead to new mechanism in field emission Here, we report our findings from in situ field electron emission Characterization on an individual singe-layer graphene and the understanding of the related mechanism The measurement of field emission from the edges was done using a microanode probe equipped in a scanning electron microscope We show that repeatable stable field emission current can be obtained after a careful conditioning process This enables us to examine experimentally the typical features of the field emission from a 2D regime We plot current versus applied field data, respectively, in In(I/E-3/2) similar to 1/E and In(I/E-3)similar to 1/E-2 coordinates, which have recently been proposed for field emission trim graphene in high and low field regimes It is observed that the plots all exhibit an upward bending feature, revealing that the field emission processes undergo from a low to high field transition We discuss with theoretical analysis the physical mechanism responsible for the new phenomena
引用
收藏
页码:6332 / 6336
页数:5
相关论文
共 11 条
[1]   Transport Properties of Graphene in the High-Current Limit [J].
Barreiro, Amelia ;
Lazzeri, Michele ;
Moser, Joel ;
Mauri, Francesco ;
Bachtold, Adrian .
PHYSICAL REVIEW LETTERS, 2009, 103 (07)
[2]   Field emission from graphene based composite thin films [J].
Eda, Goki ;
Unalan, H. Emrah ;
Rupesinghe, Nalin ;
Amaratunga, Gehan A. J. ;
Chhowalla, Manish .
APPLIED PHYSICS LETTERS, 2008, 93 (23)
[3]   New Dimensions for Field Emission: Effects of Structure in the Emitting Surface [J].
Edgcombe, C. J. .
ADVANCES IN IMAGING AND ELECTRON PHYSICS, VOL 162, 2010, 162 :77-127
[4]   FIELD-EMISSION ENERGY-DISTRIBUTION (FEED) [J].
GADZUK, JW ;
PLUMMER, EW .
REVIEWS OF MODERN PHYSICS, 1973, 45 (03) :487-548
[5]   Current saturation in zero-bandgap, topgated graphene field-effect transistors [J].
Meric, Inanc ;
Han, Melinda Y. ;
Young, Andrea F. ;
Ozyilmaz, Barbaros ;
Kim, Philip ;
Shepard, Kenneth L. .
NATURE NANOTECHNOLOGY, 2008, 3 (11) :654-659
[6]   Edge state in graphene ribbons: Nanometer size effect and edge shape dependence [J].
Nakada, K ;
Fujita, M ;
Dresselhaus, G ;
Dresselhaus, MS .
PHYSICAL REVIEW B, 1996, 54 (24) :17954-17961
[7]   Electric field effect in atomically thin carbon films [J].
Novoselov, KS ;
Geim, AK ;
Morozov, SV ;
Jiang, D ;
Zhang, Y ;
Dubonos, SV ;
Grigorieva, IV ;
Firsov, AA .
SCIENCE, 2004, 306 (5696) :666-669
[8]  
QIN XZ, P ROC SOC, DOI DOI 10.1098/RSPA.2010.0460
[9]   High field emission reproducibility and stability of carbon nanosheets and nanosheet-based backgated triode emission devices [J].
Wang, Sigen ;
Wang, Jianjun ;
Miraldo, Peter ;
Zhu, Mingyao ;
Outlaw, Ronald ;
Hou, Kun ;
Zhao, Xin ;
Holloway, Brian C. ;
Manos, Dennis ;
Tyler, Talmage ;
Shenderova, Olga ;
Ray, Mark ;
Dalton, Jay ;
McGuire, Gary .
APPLIED PHYSICS LETTERS, 2006, 89 (18)
[10]   Field Emission of Single-Layer Graphene Films Prepared by Electrophoretic Deposition [J].
Wu, Zhong-Shuai ;
Pei, Songfeng ;
Ren, Wencai ;
Tang, Daiming ;
Gao, Libo ;
Liu, Bilu ;
Li, Feng ;
Liu, Chang ;
Cheng, Hui-Ming .
ADVANCED MATERIALS, 2009, 21 (17) :1756-+