Strain and temperature distribution in broad-area high-power laser diodes under operation determined by high resolution X-ray diffraction and topography

被引:1
|
作者
Zeimer, U
Grenzer, J
Baumbach, T
Lübbert, D
Mazuelas, A
Erbert, G
机构
[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany
[2] Univ Potsdam, Inst Phys, D-14415 Potsdam, Germany
[3] Fraunhofer Inst Zerstorungsfreie Prufverfahren, D-01326 Dresden, Germany
[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France
关键词
strain; lasers; X-ray diffraction; X-ray topography; temperature behaviour;
D O I
10.1016/S0921-5107(00)00595-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Broad-area lasers were investigated by high resolution X-ray diffraction (HRXRD) and topography, before and during laser operation. Rocking curves were taken at different positions of the 150 mum wide and 2 mm long laser stripe? using high-precision motorized slits with a spatial resolution of 40 x 40 mum(2). From the series of rocking curves recorded at different lateral positions and driving currents, the curvature and temperature profiles along the stripe could be estimated for different driving currents. X-ray topographs revealed regions with higher strain compared to the surrounding area. At lateral positions within the stripe, where the highest temperature was determined by HRXRD, regions of dark contrasts, indicating defects, were detected by cathodoluminesceace. Transmission electron microscopy revealed that the highly strained regions act as sinks for point defects, since no dislocations or dislocation loops were detected. Thus, a clear con elation between temperature rise, high local strain and defect formation was found. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:87 / 90
页数:4
相关论文
共 50 条
  • [11] Reliability assurance of broad-area, high-power, multimode laser-diodes for telecommunications equipment
    Pendse, D
    Chin, AK
    Bull, D
    Maider, J
    TESTING RELIABILITY AND APPLICATIONS OF OPTOELECTRONIC DEVICES, 2001, 4285 : 1 - 13
  • [12] HIGH-POWER RING LASER USING A BROAD-AREA GAALAS AMPLIFIER
    SURETTE, MR
    GOLDBERG, L
    MEHUYS, D
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (08) : 919 - 922
  • [13] Numerical simulation of broad-area high-power semiconductor laser amplifiers
    Dai, Z
    Michalzik, R
    Unger, P
    Ebeling, KJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (12) : 2240 - 2254
  • [14] High-power angled broad-area 1.3-μm laser diodes with good beam quality
    Tsai, CH
    Su, YS
    Tsai, CW
    Tsai, DP
    Lin, CF
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) : 2412 - 2414
  • [15] Highly reliable high-power broad area laser diodes
    Rossin, V
    Peters, M
    Zucker, E
    Acklin, B
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS IV, 2006, 6104
  • [16] Numerical analysis of filamentation in conventional double heterostructure and quantum well high-power broad-area laser diodes
    Seyedfaraji, Amireh
    Ahmadi, Vahid
    Noshiravani, Mahyar
    Gity, Farzan
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 1019 - +
  • [17] On the importance of non-thermal far-field blooming in broad-area high-power laser diodes
    Piprek, Joachim
    Li, Z. M. Simon
    APPLIED PHYSICS LETTERS, 2013, 102 (22)
  • [18] HIGH-POWER OPERATION OF BROAD-AREA LASER-DIODES WITH GAAS AND ALGAAS SINGLE QUANTUM-WELLS FOR ND-YAG LASER PUMPING
    SHIGIHARA, K
    NAGAI, Y
    KARAKIDA, S
    TAKAMI, A
    KOKUBO, Y
    MATSUBARA, H
    KAKIMOTO, S
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1537 - 1543
  • [19] 9xx high-power broad area laser diodes
    Schmidt, B
    Sverdlov, B
    Pawlik, S
    Lichtenstein, N
    Müller, J
    Valk, B
    Baettig, R
    Mayer, B
    Harder, C
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS III, 2005, 5711 : 201 - 208
  • [20] High resolution X-ray diffraction and X-ray topography study of GaN on sapphire
    Wichita State Univ, Wichita, United States
    Mater Sci Eng B Solid State Adv Technol, 2 (99-106):