Radiation damage in silicon detectors

被引：179
|
作者：
Lindström, G [1 ]
机构：
[1] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 512卷 / 1-2期
关键词：
silicon detectors; defect engineering; radiation damage; NIEL; proton-; neutron-; pi-irradiation; defect analysis;
D O I：
10.1016/S0168-9002(03)01874-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：30 / 43
页数：14
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