Ultrasensitive graphene far-infrared power detectors

被引:15
|
作者
McKitterick, C. B. [1 ,2 ]
Prober, D. E. [1 ,2 ]
Vora, H. [3 ]
Du, X. [3 ]
机构
[1] Yale Univ, Dept Phys, New Haven, CT 06520 USA
[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[3] SUNY Stony Brook, Dept Phys, Stony Brook, NY 11790 USA
关键词
far-infrared; terahertz; photodetector; NEP; Johnson noise; graphene; SHOT-NOISE; PHOTON; PERFORMANCE; BOLOMETERS; SCATTERING; AMPLIFIER;
D O I
10.1088/0953-8984/27/16/164203
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We describe the properties of ultrasensitive graphene photon detectors for use in the far-infrared/terahertz spectral region and present theoretical predictions for their power detection sensitivity. These predictions are based on two graphene contacting schemes with superconducting contacts: contacts with a thin insulating barrier, and direct superconducting contacts. To quantitatively assess these predictions, we perform thermal measurements of graphene at low temperatures and analyse them to extract information on electron-phonon cooling in graphene. These new results for the electron-phonon cooling channel allow reliable prediction of the noise equivalent power (NEP) that can be expected from an optimized graphene detector, using measurement of the Johnson noise emission as the thermometry method. We find that an NEP of 2 x 10(-19) WHz(-1/2) should be achievable under certain biasing conditions with an ideal device.
引用
收藏
页数:13
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