(119) Oriented Bi-2223 thin films grown on (100) NdGaO3 by MOCVD

被引：0
|
作者：
Endo, K [1 ]
Badica, P
Abe, K
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Inst Mat Phys, Bucharest 76900, Romania
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2003年 / 13卷 / 02期
关键词：
AFM; MOCVD; (100) NdGaO3 substrate; (119) Bi-2223 thin films;
D O I：
10.1109/TASC.2003.811963
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Orientation control of high T-c superconductors is essential for superior device performance, because the coherence length is longer along the non c-axis directions than along c-axis direction. In this study, we report on the first successful preparation of (119) oriented Bi-2223 films by MOCVD using (100) NdGaO3 Substrates. Atomic force microscopy observations of the (119) Bi-2223 films are also reported. Our films have an in-plane aligned mountain-range-shaped surface morphology. This morphology is resulting from the epitaxial relationship between the (119) Bi-2223 film and (100) NdGaO3 substrate. Films exhibited a large in-plane anisotropy as revealed by, resistivity measurements and surface morphology observations.
引用
收藏
页码：2710 / 2712
页数：3
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