Temperature dependence of quantised resistance steps in electroformed metal-a-Si:H-metal structures

被引：2

作者：

Hajto, J ^{[1
]}

Joo, B

Pendleton, BJ

Owen, AE

机构：

[1] Napier Univ, Dept Appl Chem & Phys Sci, Edinburgh EH10 5DT, Midlothian, Scotland

[2] Univ Edinburgh, Dept Phys, Edinburgh EH9 3JL, Midlothian, Scotland

[3] Univ Edinburgh, Dept Elect Engn, Edinburgh EH9 3JL, Midlothian, Scotland

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

electroformed metal; quantised resistance phenomena; free electron gas;

D O I：

10.1016/S0022-3093(98)00297-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a quantum mechanical description of a free electron gas making transitions from a continuous to a discrete set of momentum states. The theory can be used to model quantised resistance phenomena in electroformed metal-a-Si:H-metal structures. The model predicts a temperature dependent smearing of the quantised resistance-steps in these structures. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1182 / 1186

页数：5

共 6 条

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