A Novel High Bandwidth Current Control Strategy for SiC MOSFET Based Active Front-End Rectifiers Under Unbalanced Input Voltage Conditions

被引:7
作者
Maheshwari, Ramkrishan [1 ]
Trintis, Ionut [2 ]
Torok, Lajos [2 ]
Munk-Nielsen, Stig [2 ]
Douglass, Philip James [3 ]
Bede, Lorand [4 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Delhi 110016, India
[2] Aalborg Univ, Dept Energy Technol, DK-9100 Aalborg, Denmark
[3] Danish Energy Assoc, DK-1900 Frederiksberg, Denmark
[4] Design Flux Technol, Edison Pk 4, DK-6715 Esbjerg, Denmark
关键词
DC-AC power converters; silicon carbide; PWM AC/DC CONVERTER; CONTROL SCHEME; OPERATING-CONDITIONS; BOOST RECTIFIER; FILTER; FRAME; GENERATION; INVERTERS; DESIGN;
D O I
10.1109/TIE.2017.2677325
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
SiC mosfet based converters are capable of high switching frequency operation. In this paper, the converter is operated with 50-kHz switching frequency for an active front-end rectifier application. Due to high switching frequency, the grid-side filter size is reduced, and the possibility of a high bandwidth current control loop is utilized in this paper. A current control loop with bandwidth of 5 kHz is designed using a proportional-integral controller in synchronously rotating dq-reference frame. In addition, the performance of the controller is tested under unbalanced input supply conditions. During this condition, new feed-forward signals, which are added to the controller output, are proposed. The gain of the feed-forward signal can be modified to achieve balanced sinusoidal grid currents, constant dc-link voltage, or a controlled negative-sequence input current, which are typical application-depending requirements. A closed-form formula to calculate the gain of the feed-forward signal to achieve the above-mentioned requirements is also proposed in this paper. To verify the proposed method, the simulation and experimental results are presented in this paper.
引用
收藏
页码:8310 / 8320
页数:11
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