Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

被引：142

作者：

Hori, Yujin ^{[1
,2
]}

Mizue, Chihoko ^{[1
,2
]}

Hashizume, Tamotsu ^{[1
,2
,3
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 08期

关键词：

FIELD-EFFECT TRANSISTORS; SURFACE PASSIVATION; AL2O3; GAN; INSULATOR; FILMS;

D O I：

10.1143/JJAP.49.080201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of fabrication processes on the electrical properties of Al2O3/GaN structures prepared by atomic layer deposition were investigated "The annealing process at 800 degrees C for the formation of ohmic electrodes brought a large number of microcrystallization regions into the Al2O3 layer, causing a marked leakage in the current-voltage characteristics of the Al2O3/GaN structure The "ohmic-first" process with a SiN protection layer was thus applied to the GaN surface In this process, the amorphous phase in the atomic configuration of Al2O3 was maintained, leading to the I sufficient suppression of leakage current at the Al2O3/GaN interface In addition, the Al2O3/GaN structures showed good capacitance-voltage characteristics, resulting in low interface state densities of less than 1 x 10(12) cm(-2) eV(-1) (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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