Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs

被引：16

作者：

Arora, Rajan ^{[1
,2
]}

Simoen, Eddy ^{[3
]}

Zhang, En Xia ^{[4
]}

Fleetwood, Daniel M. ^{[4
]}

Schrimpf, Ronald D. ^{[4
]}

Galloway, Kenneth F. ^{[4
]}

Choi, Bo K. ^{[4
]}

Mitard, Jerome ^{[3
,5
]}

Meuris, Marc ^{[3
]}

Claeys, Cor ^{[3
,5
]}

Madan, Anuj ^{[2
]}

Cressler, John D. ^{[2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Interuniv Microelect Ctr, B-3001 Leuven, Belgium

[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci EECS, Nashville, TN 37235 USA

[5] Univ Leuven, ESAT INSYS, B-3000 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 04期

关键词：

Diode; Germanium; MOSFET; p(+) -n; x-ray; RADIATION-INDUCED CHARGE; MOS DEVICES; 1/F NOISE; LEAKAGE CURRENT; PMOSFETS;

D O I：

10.1109/TNS.2010.2043745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The total-dose response of Ge p-MOSFETs and p(+) -n junction diodes is reported for devices fabricated with several process variations. Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interface reduces total-dose sensitivity for p-MOSFETs. Reduced mobility degradation is observed after irradiation for devices with a higher number of Si monolayers. The radiation-induced increase in junction leakage is related to the increasing perimeter component of the leakage current. MOSFETs with a higher number of Si monolayers at the dielectric/substrate interface also have reduced perimeter leakage current. Diode leakage current increases with increasing halo-doping density.

引用

页码：1933 / 1939

页数：7

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