Plasma nitrogen doping efficiency in molecular beam epitaxy of tellurium-based II-VI compounds

被引：12

作者：

Baron, T

Saminadayar, K

Tatarenko, S

机构：

[1] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,F-38054 GRENOBLE,FRANCE

[2] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,CNRS,F-38402 ST MARTIN DHERES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00791-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the p-type doping of tellurium-based compounds (CdTe, ZnTe) and alloys (CdMgTe, ZnMgTe, ZnCdTe) using nitrogen atoms from a plasma source in molecular beam epitaxy. A systematic decrease of the doping efficiency is observed as the Zn content decreases. We discuss the key role of the Zn content for the nitrogen doping efficiency, in the framework of two hypotheses: local strain induced in the lattice by the presence of nitrogen and formation of compounds involving nitrogen atoms.

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页码：271 / 275

页数：5

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