Strain mapping near a triple junction in strained Ni-based alloy using EBSD and biaxial nanogauges

被引:124
作者
Clair, A. [1 ]
Foucault, M. [2 ]
Calonne, O. [2 ]
Lacroute, Y. [1 ]
Markey, L. [1 ]
Salazar, M. [1 ]
Vignal, V. [1 ]
Finot, E. [1 ]
机构
[1] Univ Bourgogne, CNRS, UMR 5209, Lab Interdisciplinaire Carnot de Bourgogne, F-21078 Dijon, France
[2] Areva ANP, Ctr Tech, Dept Corros Chim, F-71205 Le Creusot, France
关键词
EBSD; Texture; Gauge; Lithography; Tensile strength; ELECTRON BACKSCATTER DIFFRACTION; AUSTENITIC STAINLESS-STEEL; ATOMIC-FORCE MICROSCOPY; PLASTIC-DEFORMATION; LOCAL DEFORMATION; SLIP SYSTEMS; ORIENTATION; FIELD; GRAIN;
D O I
10.1016/j.actamat.2011.01.051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A key element for analyzing the crack initiation in strained polycrystalline alloys is the local quantification of the surface strain distribution according to the grain texture. Using electron backscattered diffraction, the local microstructure was determined to both localize a triple junction and deduce the local Schmid factors. Kernel average misorientation (KAM) was also used to map the areas of defect concentration. The maximum principal strain and the in-plane shear strain were quantified using the biaxial nanogauge. Distortions of the array of nanodots used as spot markers were analyzed near the triple junction. The crystallographic orientation and the surface strain were then investigated both statistically for each grain and locally at the grain boundaries. The superimposition of microstructure and strain maps allows the high strain gradient (reaching 3-fold the applied strain) to be localized at preferential grain boundaries near the triple junction. The Schmid factors and the KAM were compared to the maximum principal strain and the in-plane shear strain respectively. The polycrystalline deformation was attributable first to the rotation of some grains, followed by the elongation of all grains along their preferential activated slip systems. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:3116 / 3123
页数:8
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