25 Gbps Direct Modulation in 1.3-μm InAs/GaAs High-Density Quantum Dot Lasers

被引：0

作者：

Tanaka, Yu ^{[1
,2
,3
,7
]}

Ishida, Mitsuru ^{[6
]}

Takada, Kan ^{[6
]}

Yamamoto, Tsuyoshi ^{[1
,2
,7
]}

Song, Hai-zhi ^{[1
]}

Nakata, Yoshiaki ^{[1
,3
]}

Yamaguchi, Masaomi ^{[3
]}

Nishi, Kenichi ^{[3
]}

Sugawara, Mitsuru ^{[1
,2
,3
,7
]}

Arakawa, Yasuhiko ^{[4
,5
,6
]}

机构：

[1] Fujitsu Labs Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan

[2] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan

[3] QD Laser inc, Tokyo 1000004, Japan

[4] Univ Tokyo, IIS, Tokyo 1538505, Japan

[5] Univ Tokyo, RCAST, Tokyo 1538505, Japan

[6] Univ Tokyo, Nano Quine, Tokyo 1538505, Japan

[7] OITDA, Tokyo 1120014, Japan

来源：

2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) | 2010年

关键词：

DEPENDENCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The modulation characteristics of 1.3-mu m InAs/GaAs high-density quantum-dot lasers is presented. The eight-stacked high-density quantum-dot layers provided high net modal gain of 46 cm(-1). Fabricated Fabry-Perot lasers showed the 25-Gbps direct modulation. (C)2010 Optical Society of America

引用

页数：2

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