25 Gbps Direct Modulation in 1.3-μm InAs/GaAs High-Density Quantum Dot Lasers

被引：0
|
作者：
Tanaka, Yu [1 ,2 ,3 ,7 ]
Ishida, Mitsuru [6 ]
Takada, Kan [6 ]
Yamamoto, Tsuyoshi [1 ,2 ,7 ]
Song, Hai-zhi [1 ]
Nakata, Yoshiaki [1 ,3 ]
Yamaguchi, Masaomi [3 ]
Nishi, Kenichi [3 ]
Sugawara, Mitsuru [1 ,2 ,3 ,7 ]
Arakawa, Yasuhiko [4 ,5 ,6 ]
机构：
[1] Fujitsu Labs Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan
[2] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[3] QD Laser inc, Tokyo 1000004, Japan
[4] Univ Tokyo, IIS, Tokyo 1538505, Japan
[5] Univ Tokyo, RCAST, Tokyo 1538505, Japan
[6] Univ Tokyo, Nano Quine, Tokyo 1538505, Japan
[7] OITDA, Tokyo 1120014, Japan
来源：
2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) | 2010年
关键词：
DEPENDENCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The modulation characteristics of 1.3-mu m InAs/GaAs high-density quantum-dot lasers is presented. The eight-stacked high-density quantum-dot layers provided high net modal gain of 46 cm(-1). Fabricated Fabry-Perot lasers showed the 25-Gbps direct modulation. (C)2010 Optical Society of America
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页数：2
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