A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology

被引：33
|
作者：
Kim, Joohwa [1 ]
Buckwalter, James F. [1 ]
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 06期
关键词：
CMOS; distributed amplifier (DA); millimeter-wave integrated circuit; silicon-on-insulator (SOI); TRAVELING-WAVE AMPLIFIER;
D O I：
10.1109/LMWC.2011.2139197
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power cascode distributed amplifier is demonstrated in a 45 nm silicon-on-insulator (SOI) CMOS process. The amplifier achieves a 3 dB bandwidth of 92 GHz. The peak gain is 9 dB with a gain-ripple of less 1.5 dB over the 3 dB bandwidth. The group-delay variation is under +/-4.7 ps over the 3 dB bandwidth. The amplifier consumes 73.5 mW from a 1.2 V supply and results in a gain-bandwidth efficiency figure of merit of 3.53 GHz/mW. The chip occupies an area of 0.45 mm(2) including the pads.
引用
收藏
页码：329 / 331
页数：3
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