Numerical analysis of absorption and transmission photoacoustic spectra of silicon samples with differently treated surfaces

被引:12
作者
Malinski, M. [1 ]
Chrobak, L. [1 ]
机构
[1] Tech Univ Koszalin, Dept Elect & Comp Sci, PL-75453 Koszalin, Poland
关键词
semiconductors; silicon; photoacoustic spectroscopy; surface layer; surface quality; non-destructive testing; CRYSTALS; STATES;
D O I
10.2478/s11772-010-0064-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents results of the photoacoustic (PA) spectral studies, of a series of silicon samples with differently prepared surfaces, in two PA experimental configurations, so-called, absorption and transmission ones. The PA amplitude spectra of the samples indicated existence of the damaged surface layers. In the paper, the two layer mathematical models of a sample with a damaged surface layer that were used for numerical interpretation of the amplitude PA spectra of the investigated samples, are presented and discussed.
引用
收藏
页码:46 / 50
页数:5
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