Magnetic resonance studies of defects in electron-irradiated ZnO substrates

被引：2

作者：

Son, N. T. ^{[1
]}

Ivanov, I. G. ^{[1
]}

Kuznetsov, A. Yu. ^{[2
]}

Svensson, B. G. ^{[2
]}

Zhao, Q. X. ^{[3
]}

Willander, M. ^{[3
]}

Morishita, N. ^{[4
]}

Ohshima, T. ^{[4
]}

Itoh, H. ^{[4
]}

Isoya, J. ^{[5
]}

Janzen, E. ^{[1
]}

Yakimova, R. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Univ Oslo, Dept Phys, Ctr Mat Sci & Technol, NO-0316 Oslo, Norway

[3] Linkoping Univ, Dept Sci & Technol, SE-60174 Norrkoping, Sweden

[4] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

[5] Univ Tsukuba, Tsukuba, Ibaraki 3051292, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷

关键词：

ZnO; intrinsic defect; electron irradiation; optical detection of magnetic resonance;

D O I：

10.1016/j.physb.2007.09.010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical detection of magnetic resonance (ODMR) was used to study defects in electron-irradiated ZnO substrates. In addition to the shallow donor and the Zn vacancy, several ODMR centers with an effective electron spin S = 1/2 were detected. Among these, the axial LU3 and non-axial LU4 centers are shown to be dominating recombination centers. The annealing behavior of radiation-induced defects was studied and possible defect models are discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：507 / 510

页数：4

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