Layered MoS2 grown on c-sapphire by pulsed laser deposition

被引：148

作者：

Ho, Yen-Teng ^{[1
]}

Ma, Chun-Hao ^{[1
]}

Luong, Tien-Tung ^{[1
]}

Wei, Lin-Lung ^{[1
]}

Yen, Tzu-Chun ^{[1
]}

Hsu, Wei-Ting ^{[3
]}

Chang, Wen-Hao ^{[3
]}

Chu, Yung-Ching ^{[1
]}

Tu, Yung-Yi ^{[1
]}

Pande, Krishna Prasad ^{[4
]}

Chang, Edward Yi ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect & Comp Engn, Hsinchu 30010, Taiwan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 03期

关键词：

transition-metal dichalcogenides; two-dimensional layers; MoS2; pulsed laser deposition; sulfurization; sapphire substrates; ATOMIC LAYERS; FEW-LAYER; BORON-NITRIDE; FILMS; MONOLAYER;

D O I：

10.1002/pssr.201409561

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Layered growth of molybdenum disulphide (MoS2) was successfully achieved by pulsed laser deposition (PLD) method on c-plane sapphire substrate. Growth of monolayer to a few monolayer MoS2, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A1gE12g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm(1), suggesting a monolayer MoS2 was obtained. Two-dimensional (2D) layer growth of MoS2 is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross-sectional view of transmission electron microscopy (TEM). The in-plane relationship, (0006) sapphire//(0002) MoS2 and inline image sapphire//inline imageMoS(2) is determined. The results imply that PLD is suitable for layered MoS2 growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS2, analysed by X-ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (C) 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim

引用

页码：187 / 191

页数：5

共 26 条

[1] Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition [J].