Epitaxial stabilization in thin films of oxides

被引:0
作者
Kaul, A [1 ]
Gorbenko, O [1 ]
Graboy, I [1 ]
Novojilov, M [1 ]
Bosak, A [1 ]
Kamenev, A [1 ]
Antonov, A [1 ]
Nikulin, I [1 ]
Mikhaylov, A [1 ]
Kartavtzeva, M [1 ]
机构
[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia
来源
SOLID-STATE CHEMISTRY OF INORGANIC MATERIALS IV | 2003年 / 755卷
关键词
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中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper is a survey of recent author's results obtained by the authors. It shows that many oxides can be obtained as thin epitaxial films in spite of their thermodynamic instability in bulk state at the film deposition conditions. This new synthetic approach, named epitaxial stabilization, is based on free energy gain due to structural coherence at the film/substrate interface. The epitaxial stabilization can be effectively used to enlarge the spectrum of new functional materials.
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页码:291 / 302
页数:12
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