Engineering oxide resistive switching materials for memristive device application

被引：25

作者：

Liu, Lifeng ^{[1
]}

Chen, Bing ^{[1
]}

Gao, Bin ^{[1
]}

Zhang, Feifei ^{[1
]}

Chen, Yuansha ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Wang, Yi ^{[1
]}

Han, Ruqi ^{[1
]}

Kang, Jinfeng ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 102卷 / 04期

关键词：

LOW-POWER; MECHANISM;

D O I：

10.1007/s00339-011-6331-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on a unified physical model and first-principle calculations, a material-oriented methodology has been proposed to control the bipolar switching behavior of an oxide-based resistive random access memory (RRAM) cell. According to the material-oriented methodology, the oxide-based RRAM cell can be designed by material engineering to achieve the required device performance. In this article, a Gd-doped HfO2 RRAM cell with excellent bipolar switching characteristics is developed to meet the requirements of memristive device application. The typical memristive characteristics of the Gd-doped HfO2 RRAM cell are presented, and the mechanism is discussed.

引用

页码：991 / 996

页数：6

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