Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals

被引:0
作者
Bodnar, I., V [1 ]
Chan, B. T. [1 ]
Pavlovskii, V. N. [2 ]
Svitsiankou, I. E. [2 ]
Yablonskii, G. P. [2 ]
机构
[1] Belarusian State Univ Informat & Radioelect, Minsk 220013, BELARUS
[2] Natl Acad Sci Belarus, Inst Phys, Minsk 220072, BELARUS
关键词
single crystals; cubic spinel structure; transmittance spectra; band gap; PHOTOSENSITIVE STRUCTURES; SOLID-SOLUTIONS; MNIN2S4;
D O I
10.1134/S106378261916005X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
MnAgIn7S12 single crystals 16 mm in diameter and similar to 40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10-320 K, the band gap E-g of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap Eg increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.
引用
收藏
页码:1593 / 1596
页数:4
相关论文
共 13 条
  • [1] Growth and properties of single crystals of the ternary CuIn5Se8 compound
    Bodnar, I. V.
    Bodnar, I. T.
    Gremenok, V. F.
    Kovalchuk, A. M.
    Leon, M.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 293 (02) : 324 - 329
  • [2] Temperature dependence of the band gap of Cu2ZnSnS4 single crystals
    Bodnar, I. V.
    [J]. SEMICONDUCTORS, 2015, 49 (05) : 582 - 585
  • [3] Photosensitive structures on single crystals of MnIn2S4: Preparation and properties
    Bodnar, I. V.
    Rud, V. Yu.
    Rud, Yu. V.
    [J]. SEMICONDUCTORS, 2009, 43 (11) : 1506 - 1509
  • [4] Solid solutions in In2S3-MnIn2S4 system
    Bodnar, I. V.
    Victorov, I. A.
    Dabranski, V. M.
    Osipova, M. A.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5, 2009, 6 (05): : 1130 - +
  • [5] Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions
    Bodnar', IV
    Gremenok, VF
    Rud', VY
    Rud', YV
    [J]. SEMICONDUCTORS, 1999, 33 (07) : 740 - 743
  • [6] Physical properties of CuxAg1-xIn5S8 single crystals and related surface-barrier structures
    Bodnar, IV
    Kudritskaya, EA
    Polushina, IK
    Rud', VY
    Rud', YV
    [J]. SEMICONDUCTORS, 1998, 32 (09) : 933 - 936
  • [7] Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn(SxSe1-x)4 solid solutions
    Levcenco, S.
    Dumcenco, D.
    Wang, Y. P.
    Huang, Y. S.
    Ho, C. H.
    Arushanov, E.
    Tezlevan, V.
    Tiong, K. K.
    [J]. OPTICAL MATERIALS, 2012, 34 (08) : 1362 - 1365
  • [8] Current-voltage characteristics of MnIn2S4 and MnGa2S4 single crystals
    Niftiev, NN
    Tagiev, OB
    [J]. SEMICONDUCTORS, 2004, 38 (02) : 161 - 162
  • [9] Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN
    Pässler, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) : 3956 - 3964
  • [10] Rembeza S. I., 1989, METHODS MEASURING BA