Magnetocapacitance effects of Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 thin film on Si substrate

被引：16

作者：

Chen, Ying ^{[1
,2
]}

Wang, Genshui ^{[1
]}

Zhang, Shuai ^{[1
]}

Lei, Xiuyun ^{[1
]}

Zhu, Junyu ^{[3
]}

Tang, Xiaodong ^{[3
]}

Wang, Yongling ^{[1
]}

Dong, Xianlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Dept Elect Engn, Shanghai 200241, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 05期

关键词：

MAGNETORESISTANCE; MICROSTRUCTURE; TRANSITION;

D O I：

10.1063/1.3552969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb0.7Sr0.3TiO3 / La0.7Sr0.3MnO3 (PST/LSMO) thin film has been deposited on Si substrate by chemical solution deposition. Obvious changes in dielectric constant and loss as functions of frequency and magnetic field were observed in PST/LSMO thin film. By applying both dc bias electric and magnetic fields, apparent dielectric anomalies were observed in the "butterfly-hysteresis" curves. These effects may be useful for practical application. The mechanism for the magnetocapacitance effects in PST/LSMO is rationalized by combining the Maxwell-Wagner capacitor model and the magnetoresistivity and magnetostriction of the LSMO. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552969]

引用

页数：3

共 26 条

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