Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block

被引：6

作者：

Kitamura, Yudai ^{[1
]}

Yano, Hiroshi ^{[1
]}

Iwamuro, Noriyuki ^{[1
]}

Kato, Fumiki ^{[2
]}

Tanaka, So ^{[2
]}

Tawara, Takeshi ^{[2
]}

Harada, Shinsuke ^{[2
]}

Sato, Hiroshi ^{[2
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Japan

来源：

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年

关键词：

SIC MOSFETs; SWITCH-MOS; Internal diodes; Surge current capability; Heat capacitance block; TCAD simulation;

D O I：

10.1109/ISPSD49238.2022.9813646

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This study investigated the surge current capabilities of Schottky barrier diodes (SBDs) embedded in a 1.2 kV SiC SBD-integrated trench MOSFET (SWITCH-MOS). The SBD embedded in the SWITCH-MOS with a Cu block attached to the surface showed a superior surge current capability to a standard SWITCH-MOS, and equivalent to that of a conventional SiC trench MOSFET (IE-UMOSFET). This is because the Cu block attached to the surface suppresses the increase in the temperature of the device surface during high current conduction in the SBD and prevents short-circuits between the gate and source induced when the Al electrode melts. Hence, it was found that a SWITCH-MOS with a Cu block achieves the same surge current capability as an IE-UMOSFET.

引用

页码：109 / 112

页数：4

共 7 条

[1] Experimental and Numerical Demonstration of Superior RBSOAs in 1.2 kV SiC Trench and SBD-integrated Trench MOSFETs
Todaka, Shunki
Matsui, Kevin
Aiba, Ruito
Yano, Hiroshi
Iwamuro, Noriyuki
Baba, Masakazu
Harada, Shinsuke
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2021, : 219 - 222
[2] Enhanced Short-circuit Capability for 1.2 kV SiC SBD-integrated Trench MOSFETs Using Cu Blocks Sintered on the Source Pad
Yao, Kailun
Kato, Fumiki
Tanaka, So
Harada, Shinsuke
Sato, Hiroshi
Yano, Hiroshi
Iwamuro, Noriyuki
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2022, : 297 - 300
[3] Comprehensive Study on Electrical Characteristics in 1.2 kV SiC SBD-integrated Trench and Planar MOSFETs
Matsui, Kevin
Aiba, Ruito
Yano, Hiroshi
Iwamuro, Noriyuki
Baba, Masakazu
Harada, Shinsuke
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2021, : 215 - 218
[4] Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs
Kitamura, Yudai
Kato, Fumiki
Tanaka, So
Tawara, Takeshi
Harada, Shinsuke
Sato, Hiroshi
Yano, Hiroshi
Iwamuro, Noriyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SC)
[5] Improvement of Surge Current Capability of 3.3 kV SBD-Embedded SiC-MOSFET Module
Okimoto, Shigeru
Hironaka, Yoichi
Hatori, Kenji
Iijima, Akifumi
Kawahara, Kotaro
Sugawara, Katsutoshi
Soltau, Nils
2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE, 2023,
[6] Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs
Kashiwa, Keisuke
Takahashi, Mitsuki
Kitamura, Yudai
Yano, Hiroshi
Iwamuro, Noriyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SC)
[7] Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases
Zhu, Zhengyun
Xu, Hongyi
Liu, Li
Ren, Na
Sheng, Kuang
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2021, 9 (05) : 6361 - 6369

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