Coherence collapse and low-frequency fluctuations in quantum-dash based lasers emitting at 1.57 μm

被引:21
作者
Azouigui, S.
Kelleher, B.
Hegarty, S. P.
Huyet, G.
Dagens, B.
Lelarge, F.
Accard, A.
Make, D.
Le Gouezigou, O.
Merghem, K.
Martinez, A.
Zou, Q.
Ramdane, A.
机构
[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Evry, France
[3] Cork Inst Technol, Dept Appl Phys & Instrumentat, Cork, Ireland
[4] Alcatel Thales Lab III IV, Marcoussis, France
关键词
D O I
10.1364/OE.15.014155
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Optical feedback tolerance is experimentally investigated on a 600-mu m-long quantum-dash based Fabry-Perot laser emitting at 1.57 mu m. While quantum- dashes are structurally intermediate to quantum-wells and quantum-dots, the observed behaviour is distinctly like that of a quantum-well based laser but with greater stability. Coherence collapse and low-frequency fluctuation regimes are observed and are reported here. The onset of the coherence collapse regime is experimentally determined and is found to vary from -29 dB to -21 dB external feedback level when increasing the current from twice to nine times the threshold current. (c) 2007 Optical Society of America.
引用
收藏
页码:14155 / 14162
页数:8
相关论文
共 19 条
[1]   Tolerance to optical feedback of 10-Gb/s quantum-dash-based lasers emitting at 1.51 μm [J].
Azouigui, S. ;
Dagens, B. ;
Lelarge, F. ;
Provost, J. G. ;
Accard, A. ;
Grillot, F. ;
Martinez, A. ;
Zou, Q. ;
Ramdane, A. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (13-16) :1181-1183
[2]   InGaAs-GaAs quantum-dot lasers [J].
Bimberg, D ;
Kirstaedter, N ;
Ledentsov, NN ;
Alferov, ZI ;
Kopev, PS ;
Ustinov, VM .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205
[3]   Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers [J].
Carroll, O ;
Hegarty, SP ;
Huyet, G ;
Corbett, B .
ELECTRONICS LETTERS, 2005, 41 (16) :911-912
[4]   CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119
[5]   MEASUREMENT OF THE LINEWIDTH ENHANCEMENT FACTOR-ALPHA OF SEMICONDUCTOR-LASERS [J].
HARDER, C ;
VAHALA, K ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1983, 42 (04) :328-330
[6]   Statistical properties of the dynamics of semiconductor lasers with optical feedback [J].
Huyet, G ;
Hegarty, S ;
Giudici, M ;
de Bruyn, B ;
McInerney, JG .
EUROPHYSICS LETTERS, 1997, 40 (06) :619-624
[7]   Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 μm [J].
Lelarge, Francois ;
Dagens, Beatrice ;
Renaudier, Jeremie ;
Brenot, R. ;
Accard, Alain ;
van Dijk, Frederic ;
Make, Dalila ;
Le Gouezigou, Odile ;
Provost, Jean-Guy ;
Poingt, Francis ;
Landreau, Jean ;
Drisse, Olivier ;
Derouin, Estelle ;
Rousseau, Benjamin ;
Pommereau, Frederic ;
Duan, Guang-Hua .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (01) :111-124
[8]   COHERENCE COLLAPSE IN SINGLE-MODE SEMICONDUCTOR-LASERS DUE TO OPTICAL FEEDBACK [J].
LENSTRA, D ;
VERBEEK, BH ;
DENBOEF, AJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :674-679
[9]   Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm [J].
Moreau, G. ;
Azouigui, S. ;
Cong, D. -Y. ;
Merghem, K. ;
Martinez, A. ;
Patriarche, G. ;
Ramdane, A. ;
Lelarge, F. ;
Rousseau, B. ;
Dagens, B. ;
Poingt, F. ;
Accard, A. ;
Pommereau, F. .
APPLIED PHYSICS LETTERS, 2006, 89 (24)
[10]   BISTABILITY AND LOW-FREQUENCY FLUCTUATIONS IN SEMICONDUCTOR-LASERS WITH OPTICAL FEEDBACK - A THEORETICAL-ANALYSIS [J].
MORK, J ;
TROMBORG, B ;
CHRISTIANSEN, PL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) :123-133