Strain dependent anisotropy in photoluminescence of heteroepitaxial nonpolar a-plane ZnO layers

被引：9

作者：

Chen, Jingwen ^{[1
]}

Zhang, Jun ^{[1
]}

Dai, Jiangnan ^{[1
]}

Wu, Feng ^{[1
]}

Wang, Shuai ^{[1
]}

Long, Hanling ^{[1
]}

Liang, Renli ^{[1
]}

Xu, Jin ^{[1
]}

Chen, Changqing ^{[1
]}

Tang, Zhiwu ^{[2
]}

He, Yunbin ^{[2
]}

Li, Mingkai ^{[2
]}

Feng, Zhechuan ^{[3
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Luoyu Rd 1037, Wuhan 430074, Hubei, Peoples R China

[2] Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Minis Educ,Key Lab Green Preparat & Applicat Func, Youyi Rd 368, Wuhan 430062, Hubei, Peoples R China

[3] Guangxi Univ, Lab Optoelect Mat & Detect Technol, Guangxi Key Lab Relativist Astrophys, Coll Phys Sci & Technol, Nanning 530004, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 11期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING DIODE; ELECTROLUMINESCENCE; POLARIZATION;

D O I：

10.1364/OME.7.003944

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nonpolar a-plane ZnO layers with anisotropic in-plane strains were prepared on the three substrates of r-sapphire, a-GaN, and a-Al0.08GaN templates via a pulsed laser deposition system, to investigate the distinguishing anisotropic photoluminescence properties of a-ZnO grown on foreign substrates. The optical anisotropy of nonpolar ZnO grown on GaN and AlGaN templates was investigated via polarization-dependent photoluminescence ( PL) measurement and polarization transmission spectra measurement. The 0.3 mu m a-ZnO layer grown on the a-GaN template has significant anisotropic optical properties with a degree of polarization ( DOP) of the photoluminescence ( PL) spectrum of about 0.8907, larger than 0.8786 of ZnO on a-Al0.08GaN or 0.8408 of a-ZnO on r-sapphire, revealing that the a-GaN may be the best candidate for the fabrication of modulators and that the increase of the Al component x of p-AlxGa1-xN will attenuate the anisotropic properties of the heteroepitaxial a-ZnO layer, providing a valuable basis for the choice of appropriate substrate for nonpolar a-plane ZnO based polarized optoelectronic devices. Moreover, the relationship between crystal quality anisotropy and optical anisotropy was proposed. (C) 2017 Optical Society of America

引用

页码：3944 / 3951

页数：8

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