A Novel Level Shifter Employing IGZO TFT

被引：18

作者：

Kim, Binn ^{[1
,2
]}

Choi, Seung Chan ^{[2
]}

Kuk, Seung-Hee ^{[1
]}

Jang, Yong Ho ^{[2
]}

Park, Kwon-Shik ^{[2
]}

Kim, Chang-Dong ^{[2
]}

Han, Min-Koo ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

[2] LG Display, R&D Ctr, Paju 413811, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期

关键词：

Depletion mode; indium-gallium-zinc-oxide thin-film transistor (IGZO TFT); level shifter; CIRCUITS;

D O I：

10.1109/LED.2010.2093505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new level shifter employing indium-gallium-zinc-oxide thin-film transistor (IGZO TFT) for a display panel was proposed and successfully fabricated. Two clock signals with 180 degrees. out of phase and a discharging TFT were employed to obtain a full-swing output. The IGZO level shifter has successfully exhibited a wide swing output from VDD to VSS without any additional power sources and input signals. The power consumption is 0.30 mW at a clock frequency of 12.5 kHz. The proposed level shifter with a depletion-mode device would be an important building block for an oxide TFT display.

引用

页码：167 / 169

页数：3

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