Tuning of resistive memory switching in electropolymerized metallopolymeric films

被引：71

作者：

Cui, Bin-Bin ^{[1
]}

Mao, Zupan ^{[2
]}

Chen, Yuxia ^{[1
]}

Zhong, Yu-Wu ^{[1
]}

Yu, Gui ^{[2
]}

Zhan, Chuanlang ^{[1
]}

Yao, Jiannian ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, CAS Key Lab Photochem, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China

来源：

CHEMICAL SCIENCE | 2015年 / 6卷 / 02期

基金：

中国国家自然科学基金;

关键词：

DONOR-ACCEPTOR POLYMERS; NONVOLATILE MEMORY; RUTHENIUM COMPLEXES; VOLATILE MEMORY; COPOLYMER; BEHAVIOR; INFORMATION; ELEMENTS; RADICALS; STORAGE;

D O I：

10.1039/c4sc03345k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100-1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.

引用

页码：1308 / 1315

页数：8

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