Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications

被引:16
作者
Mhiesan, Haider [1 ]
Hossain, Md Maksudul [1 ]
Rashid, Arman Ur [1 ]
Wei, Yuqi [1 ]
Mantooth, Alan [1 ]
机构
[1] Univ Arkansas, 1 Univ Arkansas, Fayetteville, AR 72701 USA
来源
2020 IEEE AEROSPACE CONFERENCE (AEROCONF 2020) | 2020年
关键词
PERFORMANCE; OPERATION; HEMTS;
D O I
10.1109/aero47225.2020.9172807
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
The design considerations for power converters operating at room or at ultra-low temperatures are the same in terms of power density, reliability, and efficiency. In order to design power converters at cryogenic temperatures, the passive and active components should be carefully selected. Understanding the behavior of the components at cryogenic temperatures leads to power converter systems that have many superior advantages such as high power density (reduced size and volume), higher efficiency (reduced system losses), and even increased system reliability. This paper reviews the status of the recent research on the cryogenic temperature behavior of Si semiconductor devices, wide bandgap semiconductor devices, passive components, and power converter topologies.
引用
收藏
页数:7
相关论文
共 28 条
  • [1] DC Modeling and Geometry Scaling of SiC Low-Voltage MOSFETs for Integrated Circuit Design
    Ahmed, Shamim
    Rashid, Arman Ur
    Hossaiiiho, Md Maksudul
    Vrotsos, Tom
    Francis, A. Matthew
    Mantooth, H. Alan
    [J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 7 (03) : 1574 - 1583
  • [2] Thermal characterization of DC and small-signal parameters of 150nm and 250nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate
    Alim, Mohammad A.
    Rezazadeh, Ali A.
    Gaquiere, Christophe
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (12)
  • [3] [Anonymous], 2008, THESIS
  • [4] [Anonymous], 2005, THESIS U BIRMINGHAM
  • [5] Azofeifa O, 2018, IEEE POWER ENERG CON
  • [6] Barth C, 2017, APPL POWER ELECT CO, P717, DOI 10.1109/APEC.2017.7930773
  • [7] Product Sets of Rationals, Multiplicative Translates of Subgroups in Residue Rings, and Fixed Points of the Discrete Logarithm
    Bourgain, Jean
    Konyagin, Sergei V.
    Shparlinski, Igor E.
    [J]. INTERNATIONAL MATHEMATICS RESEARCH NOTICES, 2008, 2008
  • [8] THE SMALL-SIGNAL AC IMPEDANCE OF GALLIUM-ARSENIDE AND SILICON P-I-N-DIODES
    CAVERLY, RH
    HILLER, G
    [J]. SOLID-STATE ELECTRONICS, 1990, 33 (10) : 1255 - 1263
  • [9] SiC power devices operation from cryogenic to high temperature: investigation of various 1.2kV SiC power devices
    Chailloux, Thibaut
    Calvez, Cyril
    Thierry-Jebali, Nicolas
    Planson, Dominique
    Tournier, Dominique
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1122 - 1125
  • [10] Cheetham P, 2018, IEEE IND ELEC, P3425, DOI 10.1109/IECON.2018.8591335