Electrical and Dielectric Characterizations of Cu2ZnSnSe4/n-Si Heterojunction

Cu2ZnSnSe4 (CZTSe) thin film has been synthesized onto silicon substrates by liquid phase epitaxial growth for the first time in which Au/CZTSe/n-Si/Al heterojunction was successfully fabricated by this technique. The crystal structure and morphology of the CZTSe film were characterized by field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The I-V characteristics of the CZTSe/n-Si heterojunction in the dark have been studied at different temperatures ranged from 298 to 398 K to determine the diode parameters such as the rectification ratio, series and shunt resistances (RR, R-s and R-sh resp.), the effective barrier height (phi(b)) and the diode ideality factor (n). The CZTSe/n-Si heterojunction shows an excellent rectification behavior. The ideality factor n, series resistance R-S, and shunt resistance R-Sh, were decreased with increasing the temperature. The photovoltaic constants such as V-OC, J(SC), fill factor and the efficiency of CZTSe/n-Si heterojunction have been calculated from the I-V characteristics under illumination. The CZTSe/n-Si heterojunction exhibits efficiency about 3.42% at room temperature. The dielectric measurements proved that the CZTSe/n-Si heterojunction device shows the behavior of two forward biased Schottky diodes.