Modelling subnanosecond pulse generation by gain switching of high-power semiconductor lasers

被引：0
|
作者：
Golovin, V. S. [1 ]
Slipchenko, S. O. [1 ]
Pikhtin, N. A. [1 ]
Kop'ev, P. S. [1 ]
机构：
[1] Ioffe Inst, St Petersburg, Russia
来源：
INTERNATIONAL CONFERENCE LASER OPTICS 2020 (ICLO 2020) | 2020年
关键词：
semiconductor lasers; optical pulses; gain switching;
D O I：
10.1109/iclo48556.2020.9285732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We analyse dynamic behaviour of broad-area edge-emitting semiconductor lasers under pulsed excitation. Our calculations show that in order to obtain high-power single-pulse output it is desirable to increase active area thickness and decrease optical confinement factor. Optimal values are defined by vertical refractive index profile and pulsed current source capabilities
引用
收藏
页数：1
相关论文
共 50 条
  • [41] Numerical analysis of external feedback concepts for spectral stabilization of high-power broad-area semiconductor lasers
    Holly, Carlo
    Hengesbach, Stefan
    Traub, Martin
    Hoffmann, Dieter
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XII, 2014, 8965
  • [42] High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture
    Slipchenko, S. O.
    Romanovich, D. N.
    Kapitonov, V. A.
    Bakhvalov, K., V
    Pikhtin, N. A.
    Kop'ev, P. S.
    QUANTUM ELECTRONICS, 2022, 52 (04) : 340 - 342
  • [43] Ultrashort pulse generation by semiconductor mode-locked lasers at 760 nm
    Wang, Huolei
    Kong, Liang
    Forrest, Adam
    Bajek, David
    Haggett, Stephanie E.
    Wang, Xiaoling
    Cui, Bifeng
    Pan, Jiaoqing
    Ding, Ying
    Cataluna, Maria Ana
    OPTICS EXPRESS, 2014, 22 (21): : 25940 - 25946
  • [44] Analysis of Cryogenic Characteristics of High Power Semiconductor Lasers
    Wang Ming-pei
    Zhang Pu
    Nie Zhi-qiang
    Liu Hui
    Sun Yu-bo
    Wu Di-hai
    Zhao Yu-Liang
    ACTA PHOTONICA SINICA, 2019, 48 (09)
  • [45] High-energy picosecond optical pulse generation with asymmetric-waveguide diode lasers.
    Avrutin, Eugene A.
    Ryvkin, Boris S.
    Kostamovaara, Juha T.
    2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO), 2016,
  • [46] Short pulse generation by Q-switching two section tapered lasers
    Adamiec, P.
    Consoli, A.
    Tijero, J. M. G.
    Esquivias, I.
    Schwertfeger, S.
    Klehr, A.
    Wenzel, H.
    Erbert, G.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XI, 2012, 8277
  • [47] Basic Aspects of High-Power Semiconductor Laser Simulation
    Wenzel, Hans
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (05)
  • [48] Compression performance of a NOLM including a SOA for Pulse Shaping of Gain Switching Diode Lasers. Influence of the alpha factor
    de Dios, Cristina
    Lamela, Horacio
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XIX, 2011, 7933
  • [49] HIGH-POWER HIGH-GAIN MONOLITHICALLY INTEGRATED PREAMPLIFIER POWER-AMPLIFIER
    YEH, PS
    WU, IF
    JIANG, S
    DAGENAIS, M
    ELECTRONICS LETTERS, 1993, 29 (22) : 1981 - 1983
  • [50] Effect of gain switching frequency on ultrashort pulse generation from laser diodes
    MUHIİTTIİN SAYIN
    M. S. O¨ZYAZICI
    Optical and Quantum Electronics, 1997, 29 : 627 - 638
12345