Modelling subnanosecond pulse generation by gain switching of high-power semiconductor lasers

被引：0
|
作者：
Golovin, V. S. [1 ]
Slipchenko, S. O. [1 ]
Pikhtin, N. A. [1 ]
Kop'ev, P. S. [1 ]
机构：
[1] Ioffe Inst, St Petersburg, Russia
来源：
INTERNATIONAL CONFERENCE LASER OPTICS 2020 (ICLO 2020) | 2020年
关键词：
semiconductor lasers; optical pulses; gain switching;
D O I：
10.1109/iclo48556.2020.9285732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We analyse dynamic behaviour of broad-area edge-emitting semiconductor lasers under pulsed excitation. Our calculations show that in order to obtain high-power single-pulse output it is desirable to increase active area thickness and decrease optical confinement factor. Optimal values are defined by vertical refractive index profile and pulsed current source capabilities
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