Selective area growth of GaN/AlN heterostructures

被引：21

作者：

Marx, D

Kawazu, Z

Nakayama, T

Mihashi, Y

Takami, T

Nunoshita, M

Ozeki, T

机构：

[1] Mitsubishi Elect Corp, Optoelect & Microwave Devices Lab, Itami, Hyogo 664, Japan

[2] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Thin Film Technol Dept, Itami, Hyogo 664, Japan

[3] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Thin Film Technol Dept, Amagasaki, Hyogo 661, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

SAG; MOVPE; MOCVD; GaN; AlN; selective growth;

D O I：

10.1016/S0022-0248(98)00178-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Selective area growth of GaN stripes with a flat and smooth (0 0 0 1) top plane has been achieved by optimizing MOCVD growth conditions. Strain of AlN/GaN heterostructure is reduced on selectively grown stripes even for a total AIN layer thickness of 200 nm. Although AlN growth is observed on SiO2 masked areas, the selectivity of subsequent GaN layers is conserved. In comparison, cracks or macro-step formation appear for growth on wide stripes. Etch pit density of selectively grown GaN/AlN multi-layer structures seems to be greatly reduced to 1/1000 compared to the wide stripe growth. (C) 1998 Elsevier Science B.V. All rights reserved.

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收藏

页码：87 / 91

页数：5

相关论文

共 13 条

[1] WIDEGAP COLUMN-III NITRIDE SEMICONDUCTORS FOR UV/BLUE LIGHT-EMITTING DEVICES [J].

AKASAKI, I ;

AMANO, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (08) :2266-2271

[2] CRACK-PROPAGATION AND MECHANICAL FRACTURE IN GAAS-ON-SI [J].

HAYAFUJI, N ;

KIZUKI, H ;

MIYASHITA, M ;

KADOIWA, K ;

NISHIMURA, T ;

OGASAWARA, N ;

KUMABE, H ;

MUROTANI, T ;

TADA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (03) :459-463

[3] SURFACE MIGRATION AND REACTION-MECHANISM DURING SELECTIVE GROWTH OF GAAS AND ALAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HIRUMA, K ;

HAGA, T ;

MIYAZAKI, M .

JOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) :717-724

[4] GROWTH, CHARACTERIZATION, AND MODELING OF TERNARY INGAAS-GAAS QUANTUM-WELLS BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

JONES, AM ;

OSOWSKI, ML ;

LAMMERT, RM ;

DANTZIG, JA ;

COLEMAN, JJ .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) :1631-1636

[5] Selective area epitaxy of GaN for electron field emission devices [J].

Kapolnek, D ;

Underwood, RD ;

Keller, BP ;

Keller, S ;

Denbaars, SP ;

Mishra, UK .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :340-343

[6] SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY [J].

KATO, Y ;

KITAMURA, S ;

HIRAMATSU, K ;

SAWAKI, N .

JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) :133-140

[7] FABRICATION OF GAN HEXAGONAL PYRAMIDS ON DOT-PATTERNED GAN/SAPPHIRE SUBSTRATES VIA SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY [J].

KITAMURA, S ;

HIRAMATSU, K ;

SAWAKI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B) :L1184-L1186

[8] Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy [J].

Kumakura, K ;

Motohisa, J ;

Fukui, T .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :700-704

[9]

Li X, 1996, MATER RES SOC SYMP P, V395, P943

[10] METALORGANIC MOLECULAR-BEAM EPITAXY OF GASB ON PATTERNED GASB SUBSTRATES USING TRIETHYLGALLIUM AND SB-4 [J].

MARX, D ;

MIYAMOTO, K ;

ASAHI, H ;

LIU, XF ;

VILLAFLOR, AB ;

MIKI, K ;

GONDA, S ;

SHIMOMURA, S ;

HIYAMIZU, S .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :874-878