Growth of C60 single crystal films on metal substrates

被引：5
|
作者：
Hou, JG [1 ]
Zeng, JL
Li, YQ
Wu, ZQ
机构：
[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Ctr Fundamental Phys, Hefei 230026, Anhui, Peoples R China
来源：
THIN SOLID FILMS | 1998年 / 320卷 / 02期
基金：
中国国家自然科学基金;
关键词：
fullerene; film growth; structure and morphology of film; deposition process; growth mechanism; metals; X-ray diffraction;
D O I：
10.1016/S0040-6090(97)00469-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality C-60(111) single crystal films have been grown on Ni3Fe(111), Ni3Co(111) and Ni3Fe(110) surfaces using hot-wall diffusion method. X-ray diffraction results show that well-ordered films can be obtained near 150 degrees C on these substrates. The high quality of the films could be attributed to the perfect lattice match between C-60 film and substrates, low growth rate of C-60, and the suitable substrate temperature. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：179 / 183
页数：5
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