Resonance phase operation of a SiGe HBT

被引：4
|
作者：
Heim, S
Wanner, R
Stoffel, M
Kasper, E
机构：
[1] Univ Stuttgart, Inst HL Tech, D-70569 Stuttgart, Germany
[2] Tech Univ Munich, Inst Hochfrequenztech, D-80333 Munich, Germany
[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 1-3期
关键词：
resonance phase transistor; HBT; SiGe; current gain;
D O I：
10.1016/j.mssp.2004.09.125
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel operation mode-the so-called resonance phase operation-is demonstrated using a SiGe HBT (hetero-bipolar transistor). Transit time effects and coherent transport lead by proper design of the transistor to a phase shift larger than pi. In this resonance phase mode, a current gain above 0 dB is achieved at frequency bands well above the transit frequency. We have designed and fabricated SiGe HBTs in order to investigate the resonance phase effect at frequencies below 50 GHz due to easier measurement technique. The transistors were fabricated using a low-temperature process. They showed a rather high breakthrough voltage of up to 20 V. The RF measurement showed the typical HBT behaviour up to the transit frequency. At higher frequencies the current gain H(21) rose again above 0 dB. We have thus demonstrated the existence of the resonance phase effect in a SiGe HBT. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：319 / 322
页数：4
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