Strong electron spin-Hall effect by a coherent optical potential

被引:1
作者
Sherman, E. Ya [1 ,2 ]
Muga, J. G. [1 ]
Dugaev, V. K. [3 ,4 ,5 ]
Ruschhaupt, A. [6 ]
机构
[1] Univ Basque Country, EHU, Dept Phys Chem, E-48080 Bilbao, Spain
[2] Basque Fdn Sci IKERBASQUE, Bilbao 48011, Spain
[3] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland
[4] Univ Tecn Lisboa, Dept Phys, P-1049001 Lisbon, Portugal
[5] Univ Tecn Lisboa, CFIF, Inst Super Tecn, P-1049001 Lisbon, Portugal
[6] Leibniz Univ Hannover, Inst Theoret Phys, D-30167 Hannover, Germany
关键词
QUANTUM-WELLS; ATOM DIODE; SEMICONDUCTORS;
D O I
10.1088/0268-1242/25/9/095004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate theoretically that a coherent manipulation of electron spins in low-dimensional semiconductor structures with a spin-orbit coupling by infrared radiation is possible. The proposed approach is based on using a dipole force acting on a two-level system in a nonuniform optical field, similar to that employed in the design of the cold atoms diode. For ballistic electrons the spin-dependent force, proportional to the intensity of external radiation, leads to a spin-Hall effect and the resulting spin separation even if the spin-orbit coupling itself does not allow for these effects. Achievable spatial separation of electrons with opposite spins can be of the order of several tenths of a micron; an order of magnitude larger than that can be produced by the charged impurity scattering in the diffusive regime.
引用
收藏
页数:4
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