Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications

被引：45

作者：

Sharma, Tushar ^{[1
]}

Aflaki, Pouya ^{[1
]}

Helaoui, Mohamed ^{[1
]}

Ghannouchi, Fadhel M. ^{[1
]}

机构：

[1] Univ Calgary, Schulich Sch Engn, Dept Elect & Comp Engn, Intelligent RF Radio Lab, Calgary, AB T2N 1N4, Canada

来源：

IEEE ACCESS | 2018年 / 6卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

broadband; class-E; delta-sigma; gallium nitride (GaN); lumped element; microstrip; switching-mode; DESIGN;

D O I：

10.1109/ACCESS.2017.2789248

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The paper presents a design of a broadband high-efficiency class-E power amplifier ( PA) for the advanced efficiency enhancement architectures applications. A sequential load pull methodology to design broadband class-E power amplifiers using a packaged gallium nitride power transistor is presented. Two different broadband matching synthesis techniques have been proposed using lumped elements have been presented and implemented in the manuscript. A fourth-order low-pass impedance transformation topology is designed as the output matching network to provide the optimum load reflection coefficients in the targeted bandwidth ( 1.8-2.7 GHz). A combination of input and output matching network has been proposed in the manuscript to satisfy the given fractional bandwidth requirements. For practical validation, a Wolfspeed ( Cree) CGH40025 package transistor has been used. Under continuous wave test condition the fabricated PA showed more than 50% power added efficiency ( PAE) with up to 29 W output power for 40% fractional bandwidth from 1.8-2.7 GHz. Furthermore, the proposed broadband Class E PA is deployed in efficiency enhancement architecture like delta-sigma modulation based transmitters. The PA shows more than 48% PAE all over the frequency band when driven with a delta-sigma modulated LTE downlink signal while maintaining high signal quality and PA reliability.

引用

页码：4709 / 4719

页数：11

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