Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

被引：20

作者：

Ali, Ashkar ^{[1
]}

Madan, Himanshu ^{[1
]}

Agrawal, Ashish ^{[1
]}

Ramirez, Israel ^{[1
]}

Misra, Rajiv ^{[1
]}

Boos, J. Brad ^{[2
]}

Bennett, Brian R. ^{[2
]}

Lindemuth, Jeff ^{[3
]}

Datta, Suman ^{[1
]}

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Lake Shore Cryotron Inc, Westerville, OH 43082 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 12期

关键词：

Antimonide MOSFET; high-k dielectric; InAsSb; low-power logic;

D O I：

10.1109/LED.2011.2170550

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates, for the first time, enhancement-mode (e-mode) antimonide MOSFETs by integrating a composite high-k gate stack (3 nm Al2O3-1 nm GaSb) with an ultrathin InAs0.7Sb0.3 quantum well (7.5 nm). The MOSFET exhibits record high electron drift mobility of 5200 cm(2)/V . s at carrier density (N-s) of 1.8 x 10(12) cm(-2), subthreshold slope of 150 mV/dec, I-ON/I-OFF ratio of similar to 4000x within a voltage window of similar to 1 V, high I-ON of 40 mu A/mu m at V-DS of 0.5 V for a 5-mu m gate length (L-G) device. The device exhibits excellent pinchoff in the output characteristics with no evidence of impact ionization enabled by enhanced quantization and e-mode operation. RF characterization allows extraction of the intrinsic device metrics (C-gs, C-gd, g(m), g(ds), v(eff), and f(t)) and the parasitic resistive and capacitive elements limiting the short-channel device performance.

引用

页码：1689 / 1691

页数：3

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