2.45-μm 1280 x 1024 InGaAs Focal Plane Array With 15-μm Pitch for Extended SWIR Imaging

被引：11
作者：
Cheng, J. F. [1 ,2 ]
Li, X. [1 ,2 ]
Shao, X. M. [1 ,2 ]
Li, T. [1 ,2 ]
Ma, Y. J. [1 ,2 ]
Gu, Y. [1 ,2 ]
Deng, S. Y. [1 ,2 ]
Zhang, Y. G. [1 ,2 ]
Gong, H. M. [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2022年 / 34卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Dark current; Imaging; Passivation; Strain; Indium; Etching; Semiconductor device measurement; Extended InGaAs; SWIR; focal plane array; InGaAs; InAlAs; plane variation; megapixel; SCIAMACHY;
D O I：
10.1109/LPT.2022.3148142
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 15 mu m pitch extended wavelength In0.83Ga0.17As/ InP mega-pixel focal plane array (FPA) with a format of 1280 x 1024 and a spectral response range of 1150-2450 nm has been demonstrated for the first time. High fill factor up to >86%, low dark current densities down to < 133 nA/cm(2), high quantum efficiencies up to >69%, were achieved by implementing novel high density micro-mesa array processing technologies. A proprietary wafer bowing control technique was developed, attaining a high pixel operability of 99.37%. Laboratory imaging was also demonstrated, showing potentiality for high resolution imaging applications in a wider SWIR spectrum range.
引用
收藏
页码：231 / 234
页数：4
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