Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure

被引:14
作者
Bescond, M. [1 ]
Logoteta, D. [2 ]
Michelini, F. [2 ]
Cavassilas, N. [2 ]
Yan, T. [1 ]
Yangui, A. [1 ]
Lannoo, M. [2 ]
Hirakawa, K. [1 ]
机构
[1] Univ Tokyo, CNRS, Inst Ind Sci, LIMMS,UMI 2820, Tokyo 1538505, Japan
[2] Aix Marseille Univ, IM2NP, UMR CNRS 7334, Technopole Chateau Gombert,Batiment Neel, F-13453 Marseille, France
基金
日本学术振兴会;
关键词
quantum transport; modeling; thermionic cooling; polar optical phonons; heat equation; lattice temperature; electronic temperature; THERMOELECTRIC-MATERIALS; THERMAL-CONDUCTIVITY; SILICON NANOWIRES; REFRIGERATION; TRANSISTORS; SCATTERING; TRANSPORT; PHYSICS; MERIT;
D O I
10.1088/1361-648X/aaa4cf
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study by means of full quantum simulations the operating principle and performance of a semiconductor heterostructure refrigerator combining resonant tunneling filtering and thermionic emission. Our model takes into account the coupling between the electric and thermal currents by self-consistently solving the transport equations within the non-equilibrium Green's function framework and the heat equation. We show that the device can achieve relatively high cooling power values, while in the considered implementation, the maximum lattice temperature drop is severely limited by the thermal conductivity of the constituting materials. In such an out-of-equilibrium structure, we then emphasize the significant deviation of the phonon temperature from its electronic counterpart which can vary over several hundred Kelvin. The interplay between those two temperatures and the impact on the electrochemical potential is also discussed. Finally, viable options toward an optimization of the device are proposed.
引用
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页数:8
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