High temperature stability of p+Si/p-diamond heterojunction diodes

被引：0
|
作者：
Uehigashi, Yota [1 ]
Ohmagari, Shinya [2 ,3 ]
Umezawa, Hitoshi [3 ]
Yamada, Hideaki [3 ]
Liang, Jianbo [1 ]
Shigekawa, Naoteru [1 ]
机构：
[1] Osaka City Univ, Grad Sch Engn, 3-3-138 Sugimoto, Sumiyoshi, Osaka 5588585, Japan
[2] Natl Inst Adv Ind Sci & Technol, Sensing Syst Res Ctr, Sensing Mat Res Team, 807-1 Slzukumachi, Tosu, Saga 8410052, Japan
[3] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Diamond Wafer Team, 1-8-31 Midorigaoka, Ikeda, Osaka 5638577, Japan
来源：
2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2021年
关键词：
D O I：
10.1109/LTB-3D53950.2021.9598364
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The high-temperature electrical stability of p(+)-Si/p-diamond heteroj unction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p(+)-Si/p-diamond HDs are stabler than diamond SBDs against annealing.
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收藏
页码：13 / 13
页数：1
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