High temperature stability of p+Si/p-diamond heterojunction diodes

被引：0
|
作者：
Uehigashi, Yota [1 ]
Ohmagari, Shinya [2 ,3 ]
Umezawa, Hitoshi [3 ]
Yamada, Hideaki [3 ]
Liang, Jianbo [1 ]
Shigekawa, Naoteru [1 ]
机构：
[1] Osaka City Univ, Grad Sch Engn, 3-3-138 Sugimoto, Sumiyoshi, Osaka 5588585, Japan
[2] Natl Inst Adv Ind Sci & Technol, Sensing Syst Res Ctr, Sensing Mat Res Team, 807-1 Slzukumachi, Tosu, Saga 8410052, Japan
[3] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Diamond Wafer Team, 1-8-31 Midorigaoka, Ikeda, Osaka 5638577, Japan
来源：
2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2021年
关键词：
D O I：
10.1109/LTB-3D53950.2021.9598364
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The high-temperature electrical stability of p(+)-Si/p-diamond heteroj unction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p(+)-Si/p-diamond HDs are stabler than diamond SBDs against annealing.
引用
收藏
页码：13 / 13
页数：1
相关论文
共 50 条
  • [21] Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film
    Wang, CX
    Yang, GW
    Zhang, TC
    Liu, HW
    Han, YH
    Luo, JF
    Gao, CX
    Zou, GT
    DIAMOND AND RELATED MATERIALS, 2003, 12 (09) : 1548 - 1552
  • [22] The n-Si/p-CVD Diamond Heterojunction
    Los, Szymon
    Paprocki, Kazimierz
    Szybowicz, Miroslaw
    Fabisiak, Kazimierz
    MATERIALS, 2020, 13 (16)
  • [23] Displacement current of Au/p-diamond Schottky contacts
    Aoki, Toshichika
    Teraji, Tokuyuki
    Koide, Yasuo
    Shiojima, Kenji
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 70 : 207 - 212
  • [24] Electrical transport behavior of n-ZnO nanorods/p-diamond heterojunction device at higher temperatures
    Sang, D. D.
    Li, H. D.
    Cheng, S. H.
    Wang, Q. L.
    Yu, Q.
    Yang, Y. Z.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (03)
  • [25] Mechanism of photoconductivity gain for p-diamond Schottky photodiode
    Koide, Yasuo
    Liao, Meiyong
    DIAMOND AND RELATED MATERIALS, 2007, 16 (4-7) : 949 - 952
  • [26] Characteristics of Au/Ti/P-diamond ohmic contact
    Wang, Yinyue
    Zhen, Congmian
    Liu, Xueqin
    Yan, Zhijun
    Gong, Hengxiang
    Yang, Yinghu
    He, Shanhu
    Bandaoti Guangdian/Semiconductor Optoelectronics, 2000, 21 (05): : 328 - 331
  • [27] An n-SnOx/i-Diamond/p-Diamond Diode With Nanotip Structure for High-Temperature CO Sensing Applications
    Juang, Feng-Renn
    Chiu, Hung-Yu
    Fang, Yean-Kuen
    Cho, Kao-Hsien
    Chen, You-Chi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (06) : 1786 - 1791
  • [28] Schottky-barrier photodiode using p-diamond epilayer grown on p+-diamond substrates
    Imura, Masataka
    Liao, Meiyong
    Alvarez, Jose
    Koide, Yasuo
    DIAMOND AND RELATED MATERIALS, 2009, 18 (2-3) : 296 - 298
  • [29] Si/nanocrystalline diamond film heterojunction diodes preparation
    Wu, NC
    Xia, YB
    Tan, SH
    Wang, LJ
    Cui, JT
    JOURNAL OF RARE EARTHS, 2006, 24 : 45 - 48
  • [30] Si/nanocrystalline diamond film heterojunction diodes preparation
    Wu, Nanchun
    Xia, Yiben
    Tan, Shouhong
    Wang, Linjun
    Cui, Jiangtao
    Journal of Rare Earths, 2006, 24 (SUPPL.): : 45 - 48
12345