Antiferroelectric phase transition in SbSI and SbSeI crystals

被引：30

作者：

Audzijonis, Algirdas ^{[1
]}

Sereika, Raimundas ^{[1
]}

Zaltauskas, Raimundas ^{[1
]}

机构：

[1] Vilnius Pedag Univ, Dept Phys, LT-08106 Vilnius, Lithuania

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 147卷 / 3-4期

关键词：

ferroelectrics; phase transitions; capacitance;

D O I：

10.1016/j.ssc.2008.05.008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This work represents existence of the high temperature antiferroelectric phase transitions in SbSI, SbSeI and BiSel crystals. The antiferrolectric phase transition is found by a measured capacitance change at a frequency of 1 kHz for the SbSI and SbSeI crystals grown by the Bridgman-Stockbarger technique in the temperature range of 270-440 K. Therefore, SbSI has three phases: ferroelectric (T < 295 K), antiferroelectric(295 < T < 410 K)and paraelectric(T > 410 K). SbSeI has two phases: antiferroelectric (T < 410 K) and paraelectric (T > 410 K). The antiferroelectric phase transition is of an intermediate type between displacive and order-disorder types. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：88 / 89

页数：2

共 8 条

[1] ELECTRONIC AND OPTICAL-PROPERTIES OF SBSBR, SBSI AND SBSEI [J].

ALWARD, JF ;

FONG, CY ;

ELBATANOUNY, M ;

WOOTEN, F .

SOLID STATE COMMUNICATIONS, 1978, 25 (05) :307-310

[2]

Audzijonis A, 1998, FERROELECTRICS, V219, P673

[3] ELECTRONIC-PROPERTIES OF BISEI AND BISEBR [J].

FONG, CY ;

PERLOV, C ;

WOOTEN, F .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (12) :2605-2612

[4] GROWTH OF SOME GROUP V-VI-VII COMPOUNDS FROM THE VAPOR [J].

GANESHA, R ;

ARIVUOLI, D ;

RAMASAMY, P .

JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :1081-1085

[5]

KALESINSKAS V, 1981, SOV PHYS-SOLID STATE, V23, P1502

[6]

Lukaszewicz K, 1997, POL J CHEM, V71, P1345

[7]

Lukaszewicz K, 1997, POL J CHEM, V71, P1852

[8]

Sobolev VV, 2003, PHYS LOW-DIMENS STR, V1-2, P165

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